SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
30 V
Drain Current-Max (ID):
61 A
Drain-source On Resistance-Max:
0.0055 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
28 pF
JESD-30 Code:
S-PDSO-N8
Number of Elements:
2
Number of Terminals:
8
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
SQUARE
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
33 W
Pulsed Drain Current-Max (IDM):
130 A
Surface Mount:
YES
Terminal Form:
NO LEAD
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
Turn-off Time-Max (toff):
60 ns
Turn-on Time-Max (ton):
115 ns
SIZ200DT-T1-GE3 Frequently Asked Questions (FAQs)
The recommended storage temperature range for SIZ200DT-T1-GE3 is -40°C to 125°C, as per Vishay's general guidelines for storage and handling of semiconductor devices.
While the SIZ200DT-T1-GE3 is designed to operate in a wide range of temperatures, it's not recommended for use in high-humidity environments (> 80% RH) without proper protection, such as conformal coating or hermetic sealing, to prevent moisture-related failures.
The maximum allowable power dissipation for the SIZ200DT-T1-GE3 is dependent on the operating temperature and thermal resistance. As a general guideline, the maximum power dissipation is 1.5 W at 25°C, but this value decreases as the temperature increases. Consult the datasheet and thermal derating curves for more information.
Yes, the SIZ200DT-T1-GE3 is RoHS (Restriction of Hazardous Substances) and REACH (Registration, Evaluation, Authorization, and Restriction of Chemicals) compliant, meeting the European Union's regulations for environmental sustainability and safety.
The recommended soldering temperature profile for the SIZ200DT-T1-GE3 is a peak temperature of 260°C, with a dwell time of 10-30 seconds, and a ramp rate of 3°C/s. However, it's essential to consult the datasheet and follow Vishay's recommended soldering guidelines to ensure reliable assembly.
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SIZ200DT-T1-GE3 Overview
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