SIZ322DT-T1-GE3 - Vishay

SIZ322DT-T1-GE3 Details

• Manufacturer Part Number:

  SIZ322DT-T1-GE3

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Obsolete

• ECCN Code:

  EAR99

• Date Of Intro:

  2017-03-21

• Manufacturer:

  Vishay Intertechnologies

• YTEOL:

  0

• Avalanche Energy Rating (Eas):

  11.25 mJ

• Case Connection:

  DRAIN SOURCE

• Configuration:

  SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  25 V

• Drain Current-Max (ID):

  30 A

• Drain-source On Resistance-Max:

  0.00635 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  50 pF

• JESD-30 Code:

  S-PDSO-N8

• Number of Elements:

  2

• Number of Terminals:

  8

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  SQUARE

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  NOT SPECIFIED

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  16.7 W

• Pulsed Drain Current-Max (IDM):

  100 A

• Surface Mount:

  YES

• Terminal Form:

  NO LEAD

• Terminal Position:

  DUAL

• Time@Peak Reflow Temperature-Max (s):

  NOT SPECIFIED

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON

• Turn-off Time-Max (toff):

  60 ns

• Turn-on Time-Max (ton):

  70 ns