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SIZF5300DT-T1-GE3 - Vishay

Description: Dual N-Channel 30 V (D-S) MOSFET

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SIZF5300DT-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAIR3x3FS BWL_1
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SIZF5300DT-T1-GE3 - Vishay  - 3D model - Other - PowerPAIR3x3FS BWL_1
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SIZF5300DT-T1-GE3 Details

  • Manufacturer Part Number:

    SIZF5300DT-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Thailand

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    SOURCE

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    125 A

  • Drain-source On Resistance-Max:

    0.00243 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    35 pF

  • JESD-30 Code:

    R-PDSO-N8

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    56.8 W

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    68 ns

  • Turn-on Time-Max (ton):

    140 ns

SIZF5300DT-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIZF5300DT-T1-GE3 is a rectangular pad with a size of 7.3 mm x 5.3 mm, with a thermal pad size of 4.5 mm x 4.5 mm. The pad spacing should be 1.5 mm.
  • To ensure reliability in high-temperature applications, it's essential to follow the recommended derating curves, ensure proper thermal management, and avoid exceeding the maximum junction temperature (Tj) of 175°C.
  • The maximum allowed voltage for the SIZF5300DT-T1-GE3 is 100 V, with a maximum repetitive peak voltage of 120 V.
  • During soldering and rework, it's essential to follow the recommended soldering profile, avoid overheating, and use a soldering iron with a temperature-controlled tip to prevent damage to the device.
  • The typical ESD rating for the SIZF5300DT-T1-GE3 is 2 kV per Human Body Model (HBM) and 150 V per Machine Model (MM).

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SIZF5300DT-T1-GE3 Overview

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