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SIZF906BDT-T1-GE3 - Vishay

Description: MOSFET DUAL N-CH 30-V (D-S) W/SCHOTT

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SIZF906BDT-T1-GE3 Details

  • Manufacturer Part Number:

    SIZF906BDT-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Date Of Intro:

    2020-11-01

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    26.5 mJ

  • Case Connection:

    SOURCE

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    105 A

  • Drain-source On Resistance-Max:

    0.0021 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    50 pF

  • JESD-30 Code:

    R-PDSO-N8

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    38 W

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    60 ns

  • Turn-on Time-Max (ton):

    190 ns

SIZF906BDT-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIZF906BDT-T1-GE3 is a standard SOD-123 package with a 1.6 mm x 0.8 mm pad size and a 0.5 mm x 0.5 mm thermal pad.
  • To ensure reliable soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a solder flux to the pads. Avoid overheating or applying excessive force, which can damage the component.
  • The maximum allowed voltage derating for the SIZF906BDT-T1-GE3 is 10% of the rated voltage, which is 90 V for this specific component.
  • Yes, the SIZF906BDT-T1-GE3 is rated for operation up to 150°C, making it suitable for high-temperature applications. However, ensure that the component is properly derated and the PCB is designed to handle the increased thermal stress.
  • To prevent electrostatic discharge (ESD) damage, handle the SIZF906BDT-T1-GE3 with ESD-safe tools and equipment, and ensure that your workspace is ESD-protected. You can also use ESD-protective packaging and storage materials.

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SIZF906BDT-T1-GE3 Overview

Use the download button to access the SIZF906BDT-T1-GE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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