SIZF906DT-T1-GE3 - Vishay

SIZF906DT-T1-GE3 Details

• Manufacturer Part Number:

  SIZF906DT-T1-GE3

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Not Recommended

• ECCN Code:

  EAR99

• Factory Lead Time:

  8 Weeks

• Date Of Intro:

  2016-05-10

• Manufacturer:

  Vishay Intertechnologies

• YTEOL:

  3

• Avalanche Energy Rating (Eas):

  16 mJ

• Configuration:

  SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  30 V

• Drain Current-Max (ID):

  60 A

• Drain-source On Resistance-Max:

  0.0038 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JESD-30 Code:

  R-PDSO-N6

• Number of Elements:

  2

• Number of Terminals:

  6

• Operating Mode:

  ENHANCEMENT MODE

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  NOT SPECIFIED

• Polarity/Channel Type:

  N-CHANNEL

• Pulsed Drain Current-Max (IDM):

  80 A

• Surface Mount:

  YES

• Terminal Form:

  NO LEAD

• Terminal Position:

  DUAL

• Time@Peak Reflow Temperature-Max (s):

  NOT SPECIFIED

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON