SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max:
20 V
JESD-30 Code:
R-XUFM-X7
JESD-609 Code:
e3/e4
Number of Elements:
2
Number of Terminals:
7
Operating Temperature-Max:
150 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Qualification Status:
Not Qualified
Reference Standard:
UL RECOGNIZED
Surface Mount:
NO
Terminal Finish:
TIN/SILVER
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
POWER CONTROL
Transistor Element Material:
SILICON
Turn-off Time-Nom (toff):
240 ns
Turn-on Time-Nom (ton):
107 ns
VCEsat-Max:
2 V
SK50GARL065 Frequently Asked Questions (FAQs)
The recommended gate resistor value for SK50GARL065 is typically between 10 ohms to 20 ohms, depending on the specific application and switching frequency.
To ensure proper thermal management for SK50GARL065, it is recommended to use a heat sink with a thermal resistance of less than 1°C/W, and to apply a thin layer of thermal interface material (TIM) between the device and the heat sink.
The maximum allowed voltage overshoot for SK50GARL065 is typically 10% to 20% above the maximum rated voltage, depending on the specific application and operating conditions.
Yes, SK50GARL065 can be used in a parallel configuration, but it is recommended to ensure that the devices are matched in terms of their electrical characteristics, and that the gate drive signals are properly synchronized to avoid shoot-through currents.
The recommended dead time for SK50GARL065 in a half-bridge configuration is typically between 100 ns to 500 ns, depending on the specific application and switching frequency.
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SK50GARL065 Overview
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