SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max:
20 V
JESD-30 Code:
R-XUFM-X7
JESD-609 Code:
e2
Number of Elements:
2
Number of Terminals:
7
Operating Temperature-Max:
150 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
450 W
Qualification Status:
Not Qualified
Reference Standard:
UL RECOGNIZED
Surface Mount:
NO
Terminal Finish:
TIN SILVER
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Transistor Application:
POWER CONTROL
Transistor Element Material:
SILICON
Turn-off Time-Nom (toff):
335 ns
Turn-on Time-Nom (ton):
90 ns
VCEsat-Max:
2.5 V
SKM100GB063D Frequently Asked Questions (FAQs)
The maximum allowed overcurrent for the SKM100GB063D is 2 times the nominal current (In) for a maximum of 10ms, according to SEMIKRON's application notes.
Proper thermal management for the SKM100GB063D involves ensuring good heat sink contact, using a thermal interface material, and maintaining a maximum junction temperature (Tj) of 150°C. A heat sink with a thermal resistance of ≤ 0.5 K/W is recommended.
The recommended gate resistor value for the SKM100GB063D is between 10 ohms and 20 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI).
Yes, the SKM100GB063D can be used in a parallel configuration, but it's essential to ensure that the modules are matched in terms of their electrical characteristics and thermal performance. SEMIKRON recommends using modules from the same production batch to minimize variations.
The maximum allowed voltage imbalance between the DC links in a 3-phase inverter using the SKM100GB063D is ±10% of the nominal DC link voltage. Exceeding this limit can lead to uneven current sharing and reduced system reliability.
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SKM100GB063D Overview
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