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SKM150GB17E4 - Semikron

Description: POWER IGBT TRANSISTOR

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SKM150GB17E4 - Semikron  - 3D model
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SKM150GB17E4 Details

  • Manufacturer Part Number:

    SKM150GB17E4

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Slovakia

  • ECCN Code:

    EAR99

  • Manufacturer:

    SEMIKRON

  • YTEOL:

    7

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    248 A

  • Collector-Emitter Voltage-Max:

    1700 V

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.4 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X7

  • Number of Elements:

    2

  • Number of Terminals:

    7

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    815 ns

  • Turn-on Time-Nom (ton):

    275 ns

  • VCEsat-Max:

    2.2 V

SKM150GB17E4 Frequently Asked Questions (FAQs)

  • The maximum allowed junction temperature for the SKM150GB17E4 is 150°C, as specified in the datasheet. However, it's recommended to operate the module at a temperature below 125°C to ensure reliable operation and extend its lifespan.
  • Proper thermal management is crucial for the SKM150GB17E4. Ensure good thermal contact between the module and the heat sink, use a suitable thermal interface material, and provide adequate airflow or cooling to keep the module temperature within the recommended range.
  • The recommended gate resistance for the SKM150GB17E4 is between 10 ohms and 20 ohms. This value helps to prevent oscillations and ensures stable operation of the IGBT.
  • Yes, the SKM150GB17E4 can be used in a parallel configuration, but it's essential to ensure that the modules are properly matched and that the gate drive circuits are designed to handle the parallel configuration. Additionally, the user should carefully evaluate the thermal management and ensure that the modules are properly cooled.
  • The maximum allowed dv/dt for the SKM150GB17E4 is 10 kV/μs. Exceeding this value can lead to premature aging or failure of the IGBT. It's essential to ensure that the gate drive circuit is designed to limit the dv/dt to a safe value.

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SKM150GB17E4 Overview

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