SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max:
20 V
JESD-30 Code:
R-XUFM-X11
Number of Elements:
2
Number of Terminals:
11
Operating Temperature-Max:
175 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Qualification Status:
Not Qualified
Reference Standard:
UL RECOGNIZED
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
POWER CONTROL
Transistor Element Material:
SILICON
VCEsat-Max:
2.3 V
SKM75GB12V Frequently Asked Questions (FAQs)
The maximum allowed overcurrent for the SKM75GB12V is 150% of the nominal current (75A) for a maximum of 1 second, but it's recommended to stay within the nominal current rating for continuous operation.
Ensure good thermal contact between the module and the heat sink, use a thermal interface material (TIM) if necessary, and maintain a maximum junction temperature of 150°C. Also, consider forced air cooling or liquid cooling for high-power applications.
The recommended gate resistor value is between 10 ohms and 20 ohms, depending on the specific application and switching frequency. A higher resistor value can help reduce electromagnetic interference (EMI).
Yes, the SKM75GB12V can be used in a parallel configuration, but it's essential to ensure that the modules are matched in terms of electrical characteristics and thermal performance. Also, consider the increased complexity of the gate drive circuitry and the potential for uneven current sharing.
The maximum allowed voltage imbalance is ±10% of the nominal DC link voltage. Exceeding this limit can lead to uneven current sharing and reduced reliability.
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SKM75GB12V Overview
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