SMAJ8.5CAHR3G - Taiwan Semiconductor

SMAJ8.5CAHR3G Details

• Manufacturer Part Number:

  SMAJ8.5CAHR3G

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Obsolete

• Country Of Origin:

  Mainland China

• ECCN Code:

  EAR99

• HTS Code:

  8541.10.00.50

• Manufacturer:

  Taiwan Semiconductor

• YTEOL:

  0

• Additional Feature:

  EXCELLENT CLAMPING CAPABILITY

• Breakdown Voltage-Max:

  10.4 V

• Breakdown Voltage-Min:

  9.44 V

• Breakdown Voltage-Nom:

  9.92 V

• Clamping Voltage-Max:

  14.4 V

• Configuration:

  SINGLE

• Diode Element Material:

  SILICON

• Diode Type:

  TRANS VOLTAGE SUPPRESSOR DIODE

• JEDEC-95 Code:

  DO-214AC

• JESD-30 Code:

  R-PDSO-C2

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Non-rep Peak Rev Power Dis-Max:

  400 W

• Number of Elements:

  1

• Number of Terminals:

  2

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  260

• Polarity:

  BIDIRECTIONAL

• Power Dissipation-Max:

  1 W

• Reference Standard:

  AEC-Q101

• Rep Pk Reverse Voltage-Max:

  8.5 V

• Surface Mount:

  YES

• Technology:

  AVALANCHE

• Terminal Finish:

  Matte Tin (Sn)

• Terminal Form:

  C BEND

• Terminal Position:

  DUAL

• Time@Peak Reflow Temperature-Max (s):

  30