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SMBJ30AHE3_A/H - Vishay

Description: ESD Suppressors / TVS Diodes 600W 30V 5% SMB (DO-214AA)

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SMBJ30AHE3_A/H - Vishay PCB footprint - Diodes Moulded - Diodes Moulded - DO-214AA (SMB)
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SMBJ30AHE3_A/H - Vishay  - 3D model - Diodes Moulded - DO-214AA (SMB)
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SMBJ30AHE3_A/H Details

  • Manufacturer Part Number:

    SMBJ30AHE3_A/H

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    76 Weeks

  • Date Of Intro:

    2019-02-07

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    EXCELLENT CLAMPING CAPABILITY

  • Breakdown Voltage-Max:

    36.8 V

  • Breakdown Voltage-Min:

    33.3 V

  • Breakdown Voltage-Nom:

    35.05 V

  • Clamping Voltage-Max:

    48.4 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • Forward Voltage-Max (VF):

    3.5 V

  • JEDEC-95 Code:

    DO-214AA

  • JESD-30 Code:

    R-PDSO-C2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Peak Rev Power Dis-Max:

    600 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    5 W

  • Reference Standard:

    AEC-Q101; UL RECOGNIZED

  • Rep Pk Reverse Voltage-Max:

    30 V

  • Reverse Current-Max:

    1 µA

  • Reverse Test Voltage:

    30 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

SMBJ30AHE3_A/H Frequently Asked Questions (FAQs)

  • The recommended footprint and land pattern for SMBJ30AHE3_A/H can be found in the Vishay Intertechnologies' application note AN10365, which provides guidelines for surface-mount assembly of SMBJ devices.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating curves provided in the datasheet, and to consider the maximum junction temperature (Tj) of 150°C. Additionally, ensure proper thermal management, such as using a heat sink or thermal interface material, to keep the device temperature within the recommended range.
  • Yes, the SMBJ30AHE3_A/H can be used in a parallel configuration to increase the current handling capability. However, it is essential to ensure that the devices are properly matched and that the current sharing is balanced to avoid overheating and reduce the overall reliability.
  • The SMBJ30AHE3_A/H can withstand a maximum surge current of 30A, as specified in the datasheet. However, it is recommended to follow the surge current derating curves to ensure the device's reliability in high-surge current applications.
  • To select the correct SMBJ30AHE3_A/H variant, consider the specific requirements of your application, such as the working voltage, current, and environmental conditions. Refer to the datasheet and consult with Vishay Intertechnologies' application engineers or distributors for guidance on selecting the most suitable variant.

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SMBJ30AHE3_A/H Overview

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