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SMBJ9.0A-E3/5B - Vishay

Description: Diode TVS Single Uni-Dir 9V 600W 2-Pin SMB T/R

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SMBJ9.0A-E3/5B - Vishay PCB footprint - Diodes Moulded - Diodes Moulded - DO-214AA (SMB)
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SMBJ9.0A-E3/5B - Vishay  - 3D model - Diodes Moulded - DO-214AA (SMB)
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SMBJ9.0A-E3/5B Details

  • Manufacturer Part Number:

    SMBJ9.0A-E3/5B

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SMB, 2 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7.26

  • Additional Feature:

    EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED

  • Breakdown Voltage-Max:

    11.1 V

  • Breakdown Voltage-Min:

    10 V

  • Breakdown Voltage-Nom:

    10.55 V

  • Clamping Voltage-Max:

    15.4 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • Forward Voltage-Max (VF):

    3.5 V

  • JEDEC-95 Code:

    DO-214AA

  • JESD-30 Code:

    R-PDSO-C2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Peak Rev Power Dis-Max:

    600 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    5 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    UL RECOGNIZED

  • Rep Pk Reverse Voltage-Max:

    9 V

  • Reverse Current-Max:

    10 µA

  • Reverse Test Voltage:

    9 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

SMBJ9.0A-E3/5B Frequently Asked Questions (FAQs)

  • The recommended footprint and land pattern for SMBJ9.0A-E3/5B can be found in the Vishay Intertechnologies' application note AN10365, which provides guidelines for surface-mount assembly of SMB and SMC packages.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating curves provided in the datasheet, and to consider the maximum junction temperature (Tj) of 150°C. Additionally, ensure proper thermal management, such as using a heat sink or thermal interface material, to keep the device temperature within the recommended range.
  • While SMBJ9.0A-E3/5B is a TVS diode, it is not designed for high-frequency applications. The device's parasitic capacitance and inductance may affect the circuit's performance at high frequencies. For high-frequency applications, consider using a TVS diode specifically designed for high-frequency operation, such as the Vishay's VTVS series.
  • To select the correct SMBJ9.0A-E3/5B variant, consider the following factors: breakdown voltage (Vbr), peak pulse current (IPP), and package type. Ensure that the selected device meets the requirements of your application, and consult the datasheet and Vishay's selection guide for TVS diodes if needed.
  • The SMBJ9.0A-E3/5B has an ESD rating of ±30 kV per IEC 61000-4-2, which means it can withstand electrostatic discharges up to 30 kV without damage or degradation.

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SMBJ9.0A-E3/5B Overview

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