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SNXH600B100H4Q2F2S1G-S - onsemi

Description: IGBT Module Trench Field Stop Three Level Inverter 1000 V 173 A 422 W Chassis Mount 56-PIM (93x47)

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PCB Footprints
SNXH600B100H4Q2F2S1G-S - onsemi PCB footprint - Other - Other - PIM56, 93x47 (SOLDER PIN) CASE 180BK
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3D Models
SNXH600B100H4Q2F2S1G-S - onsemi  - 3D model - Other - PIM56, 93x47 (SOLDER PIN) CASE 180BK
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SNXH600B100H4Q2F2S1G-S Details

  • Manufacturer Part Number:

    SNXH600B100H4Q2F2S1G-S

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PIM56, 93x47 (SOLDER PIN)

  • Manufacturer Package Code:

    180BK

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.35

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    173 A

  • Collector-Emitter Voltage-Max:

    1000 V

  • Configuration:

    3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • Gate-Emitter Thr Voltage-Max:

    6 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X50

  • JESD-609 Code:

    e3

  • Number of Elements:

    6

  • Number of Terminals:

    50

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Packing Method:

    TRAY

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    422 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    641.42 ns

  • Turn-on Time-Nom (ton):

    149.83 ns

  • VCEsat-Max:

    2.3 V

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This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
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SNXH600B100H4Q2F2S1G-S Overview

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