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SP8K24HZGTB - ROHM Semiconductor

Description: 45V Nch+Nch Power MOSFET

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SP8K24HZGTB - ROHM Semiconductor PCB footprint - Small Outline Packages - Small Outline Packages - 8 lead sop
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SP8K24HZGTB - ROHM Semiconductor  - 3D model - Small Outline Packages - 8 lead sop
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SP8K24HZGTB Details

  • Manufacturer Part Number:

    SP8K24HZGTB

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-02-26

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    45 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.037 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    175 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SP8K24HZGTB Frequently Asked Questions (FAQs)

  • A good PCB layout for the SP8K24HZGTB should prioritize thermal dissipation. Place the device near a thermal pad or a heat sink, and ensure a low-thermal-resistance path to the PCB's ground plane. Avoid routing high-frequency signals near the device to minimize electromagnetic interference.
  • To ensure reliable operation across the entire operating temperature range (-40°C to 125°C), follow the recommended operating conditions, and consider the device's thermal characteristics. Implement thermal management techniques, such as heat sinks or thermal pads, and ensure good airflow around the device.
  • For EMI and EMC compliance, ensure proper PCB layout, decoupling, and shielding. Use a multi-layer PCB with a solid ground plane, and route high-frequency signals away from the device. Implement EMI filters, and consider using a metal shield or a Faraday cage to contain electromagnetic radiation.
  • Follow the recommended power-up and power-down sequences to prevent damage to the device. Ensure a slow and controlled voltage ramp-up (typically 1-10 ms) and ramp-down to prevent electrical overstress. Use a soft-start circuit or a voltage supervisor to regulate the power supply.
  • Monitor the device's temperature, voltage, and current to ensure reliable operation. Implement over-temperature protection (OTP), over-voltage protection (OVP), and over-current protection (OCP) to detect faults and prevent damage. Use a temperature sensor, voltage monitor, and current sense resistor to monitor the device's operating conditions.

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SP8K24HZGTB Overview

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