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SP8K2HZGTB - ROHM Semiconductor

Description: 30V Nch+Nch Power MOSFET

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SP8K2HZGTB - ROHM Semiconductor PCB footprint - Small Outline Packages - Small Outline Packages - SOP8_2022-2
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3D Models
SP8K2HZGTB - ROHM Semiconductor  - 3D model - Small Outline Packages - SOP8_2022-2
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SP8K2HZGTB Details

  • Manufacturer Part Number:

    SP8K2HZGTB

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2019-12-06

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5.4

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.047 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    95 pF

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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SP8K2HZGTB Overview

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