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SP8M4FRATB - ROHM Semiconductor

Description: MOSFET N/P-Channel 30V 9A/7A 8SOP

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SP8M4FRATB - ROHM Semiconductor PCB footprint - Small Outline Packages - Small Outline Packages - SOP-8 _2021
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3D Models
SP8M4FRATB - ROHM Semiconductor  - 3D model - Small Outline Packages - SOP-8 _2021
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SP8M4FRATB Details

  • Manufacturer Part Number:

    SP8M4FRATB

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    36 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SP8M4FRATB Frequently Asked Questions (FAQs)

  • ROHM recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
  • Use a heat sink, ensure good airflow, and consider derating the device's power consumption according to the temperature derating curve provided in the datasheet.
  • Although the datasheet doesn't specify a maximum input voltage, it's recommended to limit the input voltage to 5.5V to prevent damage to the internal ESD protection diodes.
  • Yes, but be aware that the device is not optimized for high-frequency switching applications. You may need to add external components to ensure stability and minimize EMI.
  • The POR and BOR functions are internally implemented, but you may need to add external capacitors to ensure proper reset operation. Consult the datasheet and application notes for guidance.

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