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SP8M6HZGTB - ROHM Semiconductor

Description: 30V Nch+Pch Power MOSFET

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SP8M6HZGTB - ROHM Semiconductor - PCB symbol
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SP8M6HZGTB - ROHM Semiconductor PCB footprint - Small Outline Packages - Small Outline Packages - 8 lead sop
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SP8M6HZGTB - ROHM Semiconductor - 3D model - Small Outline Packages - 8 lead sop
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SP8M6HZGTB Details

  • Manufacturer Part Number:

    SP8M6HZGTB

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2019-12-06

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5.32

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.082 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SP8M6HZGTB Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • ROHM recommends following the derating curves in the datasheet, and ensuring good thermal design and heat dissipation. Additionally, consider using a heat sink or thermal interface material to reduce junction temperature.
  • Although not explicitly stated in the datasheet, ROHM recommends keeping the gate voltage between -5V and VCC + 0.3V to prevent damage to the internal gate oxide.
  • Yes, the SP8M6HZGTB is suitable for high-frequency switching applications up to 1MHz. However, ensure proper PCB layout, decoupling, and gate drive design to minimize ringing and losses.
  • ROHM recommends following standard ESD handling procedures, such as using an ESD wrist strap, mat, or workstation, and ensuring that all equipment and tools are properly grounded.

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SP8M6HZGTB Overview

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