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SPA11N60C3 - Infineon

Description: MOSFET N-Ch 600V 11A TO220FP-3 CoolMOS C3

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SPA11N60C3 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG­TO220 FullPAK
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SPA11N60C3 - Infineon  - 3D model - Transistor Outline, Vertical - PG­TO220 FullPAK
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SPA11N60C3 Details

  • Manufacturer Part Number:

    SPA11N60C3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    340 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.38 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    33 W

  • Pulsed Drain Current-Max (IDM):

    33 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SPA11N60C3 Frequently Asked Questions (FAQs)

  • The maximum operating junction temperature of the SPA11N60C3 is 175°C.
  • To ensure reliability, it is recommended to follow the thermal design guidelines provided by Infineon, and to implement a thermal management system to keep the junction temperature below 150°C.
  • The recommended gate resistor value for the SPA11N60C3 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • Yes, the SPA11N60C3 is suitable for high-frequency switching applications up to 100 kHz, but it's recommended to consult the datasheet and application notes for specific guidance on switching losses and thermal management.
  • It is recommended to use a suitable overvoltage protection circuit, such as a TVS diode or a zener diode, and to implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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SPA11N60C3 Overview

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Part Image FCP11N60 Rochester Electronics LLC

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Part Image SPP11N65C3 Rochester Electronics LLC

11A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Part Image FCP11N60F Fairchild Semiconductor Corporation

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Part Image FCP11N60 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image SPP11N60C3 Infineon Technologies AG

Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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