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SPD02N80C3 - Infineon

Description: MOSFETs N-Ch 800V 2A DPAK-2 CoolMOS C3

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SPD02N80C3 Details

  • Manufacturer Part Number:

    SPD02N80C3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-252AA

  • Package Description:

    GREEN, PLASTIC, TO-252, 2/3 PIN

  • Pin Count:

    4

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Additional Feature:

    AVALANCHE RATED, HIGH VOLTAGE

  • Avalanche Energy Rating (Eas):

    90 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    2.7 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    6 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SPD02N80C3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SPD02N80C3 is -40°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, such as using a heat sink, and ensuring good airflow around the device.
  • The maximum current rating for the SPD02N80C3 is 2A, but it's essential to consider the power dissipation and thermal management to ensure reliable operation.
  • Yes, the SPD02N80C3 can be used in switching applications, but it's crucial to consider the switching frequency, voltage, and current to ensure the device operates within its safe operating area.
  • To protect the SPD02N80C3 from ESD, it's essential to follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats, and ensuring that the device is properly grounded during assembly.

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SPD02N80C3 Overview

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Part Image SPD02N80C3ATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 2A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image SPD02N80C3BT Infineon Technologies AG

Power Field-Effect Transistor, 2A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image SPD02N80C3BTMA1 Infineon Technologies AG

Power Field-Effect Transistor, 2A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA