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SPD02N80C3ATMA1 - Infineon

Description: INFINEON - SPD02N80C3ATMA1 - MOSFET, N, TO-252

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SPD02N80C3ATMA1 - Infineon PCB footprint - Other - Other - PG-TO252-3-11_FFW
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SPD02N80C3ATMA1 - Infineon  - 3D model - Other - PG-TO252-3-11_FFW
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SPD02N80C3ATMA1 Details

  • Manufacturer Part Number:

    SPD02N80C3ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    GREEN, PLASTIC, TO-252, 2/3 PIN

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Additional Feature:

    AVALANCHE RATED, HIGH VOLTAGE

  • Avalanche Energy Rating (Eas):

    90 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    2.7 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    6 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SPD02N80C3ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SPD02N80C3ATMA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
  • The recommended gate resistor value for the SPD02N80C3ATMA1 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • Yes, the SPD02N80C3ATMA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
  • To protect the device from ESD, handle the device by the body, use an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded.

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SPD02N80C3ATMA1 Overview

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Power Field-Effect Transistor, 2A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA