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SPD03N60C3ATMA1 - Infineon

Description: N-Channel 600 V 3.2A (Tc) 38W (Tc) Surface Mount PG-TO252-3

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SPD03N60C3ATMA1 - Infineon PCB footprint - Other - Other - PG-TO252_2024
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SPD03N60C3ATMA1 Details

  • Manufacturer Part Number:

    SPD03N60C3ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    3.2 A

  • Drain-source On Resistance-Max:

    1.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    38 W

  • Pulsed Drain Current-Max (IDM):

    9.6 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    120 ns

SPD03N60C3ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SPD03N60C3ATMA1 is -55°C to 175°C.
  • To minimize switching losses, ensure the gate drive voltage is sufficient (typically 10-15V), and the gate resistance is minimized (e.g., using a low-impedance gate driver).
  • To minimize parasitic inductance and capacitance, use a compact PCB layout with short, wide traces, and place the MOSFET close to the driver IC. Avoid using vias under the MOSFET, and use a solid ground plane.
  • Use a voltage clamp or a zener diode to protect against overvoltage, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • For high-power applications, use a heat sink with a thermal interface material (TIM) and ensure good airflow around the heat sink. Consider using a fan or a liquid cooling system for high-power density applications.

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