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SPD07N20G - Infineon

Description: Infineon SPD07N20G N-channel MOSFET Transistor, 7 A, 200 V, 3-Pin TO-252

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SPD07N20G - Infineon PCB footprint - Other - Other - PG-TO252-3_2023-4
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SPD07N20G Details

  • Manufacturer Part Number:

    SPD07N20G

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-252

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    7 A

  • Drain-source On Resistance-Max:

    0.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    40 W

  • Pulsed Drain Current-Max (IDM):

    28 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

SPD07N20G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SPD07N20G is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
  • To ensure reliability in high-temperature applications, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive material, and minimizing thermal resistance. Additionally, consider derating the device's power handling capability at higher temperatures.
  • For optimal performance and reliability, it's recommended to follow Infineon's guidelines for PCB layout and design. This includes using a symmetrical layout, minimizing track lengths, and ensuring good thermal conductivity. Additionally, consider using a thermal pad and vias to improve heat dissipation.
  • To protect the SPD07N20G from ESD, it's essential to follow proper handling and storage procedures. This includes using ESD-safe materials, grounding yourself before handling the device, and storing the device in an ESD-safe environment. Additionally, consider using ESD protection devices, such as TVS diodes, in your circuit design.
  • For optimal reliability and performance, it's recommended to follow Infineon's guidelines for soldering and assembly. This includes using a soldering iron with a temperature range of 250°C to 260°C, using a solder with a melting point above 217°C, and avoiding excessive soldering time.

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SPD07N20G Overview

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Part Image SPD07N20 Siemens

Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET