Part Image

SPP03N60S5XKSA1 - Infineon

Description: Trans MOSFET N-CH 600V 3.2A 3-Pin(3+Tab) TO-220AB Tube

Download SPP03N60S5XKSA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SPP03N60S5XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-3-1_2023-2
click to zoom
3D Models
SPP03N60S5XKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220-3-1_2023-2
click to zoom

SPP03N60S5XKSA1 Details

  • Manufacturer Part Number:

    SPP03N60S5XKSA1

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    GREEN, PLASTIC, TO-220, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    3.2 A

  • Drain-source On Resistance-Max:

    1.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    5.7 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

SPP03N60S5XKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the SPP03N60S5XKSA1 is 175°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 150°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's drain pad, and ensure the heat sink is properly mounted and secured. Additionally, consider the thermal resistance of the PCB and the surrounding environment.
  • The recommended gate drive voltage for the SPP03N60S5XKSA1 is between 10V and 15V. However, the device can tolerate gate voltages up to 20V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device and ensure optimal performance.
  • Yes, the SPP03N60S5XKSA1 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate charge, and parasitic capacitances when designing the application. Additionally, ensure the device is properly cooled and the PCB is designed to minimize parasitic inductances and capacitances.
  • To protect the SPP03N60S5XKSA1 from overvoltage and overcurrent, consider using a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions. Ensure the device is operated within its safe operating area (SOA) to prevent damage.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SPP03N60S5XKSA1 Overview

Use the download button to access the SPP03N60S5XKSA1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SPP03, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SPP03N60S5XKSA1

Showing 0 results