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SPP11N80C3 - Infineon

Description: MOSFET N-Ch 800V 11A TO220-3 CoolMOS C3

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SPP11N80C3 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-3_3_
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3D Models
SPP11N80C3 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220-3_3_
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SPP11N80C3 Details

  • Manufacturer Part Number:

    SPP11N80C3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-220AB

  • Package Description:

    GREEN, PLASTIC, TO-220, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    470 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.45 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    156 W

  • Pulsed Drain Current-Max (IDM):

    33 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

SPP11N80C3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SPP11N80C3 is -40°C to 150°C.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10 K/W is recommended. Additionally, the device should be mounted on a PCB with a thermal via to dissipate heat efficiently.
  • The recommended gate resistor value for the SPP11N80C3 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • Yes, the SPP11N80C3 is suitable for high-reliability applications due to its robust design and manufacturing process. However, it's essential to follow proper design and assembly guidelines to ensure the device operates within its specified parameters.
  • To protect the SPP11N80C3 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB and assembly process follow ESD-safe guidelines.

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SPP11N80C3 Overview

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Part Image SPP11N80C3XKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB