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SPP20N60C3 - Infineon

Description: N-channel MOSFET,SPP20N60C3 20.7A 650V

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SPP20N60C3 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO 220- FP
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3D Models
SPP20N60C3 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO 220- FP
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SPP20N60C3 Details

  • Manufacturer Part Number:

    SPP20N60C3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    690 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    20.7 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    208 W

  • Pulsed Drain Current-Max (IDM):

    62.1 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SPP20N60C3 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the SPP20N60C3 is not explicitly stated in the datasheet. However, Infineon provides a SOA curve in the application note AN2013-01, which can be used to determine the maximum safe operating area for this device.
  • To ensure the SPP20N60C3 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate current should be sufficient to charge the gate capacitance quickly. A gate resistor value between 10Ω to 100Ω is recommended to limit the gate current and prevent oscillations.
  • The maximum allowed drain-source voltage (Vds) for the SPP20N60C3 is 600V, as specified in the datasheet. However, it's essential to consider the maximum voltage rating, derating, and voltage spikes when designing the application.
  • To handle thermal management for the SPP20N60C3, ensure good heat sinking, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/mK, and consider using a heat sink with a thermal resistance of less than 10°C/W. Monitor the junction temperature (Tj) and ensure it stays below the maximum rated temperature of 175°C.
  • For the SPP20N60C3, a good PCB layout practice is to use a compact layout, minimize trace lengths, and use a ground plane to reduce electromagnetic interference (EMI). Keep the gate trace short and away from the drain trace to prevent oscillations. Use a Kelvin connection for the source pin to reduce parasitic inductance.

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SPP20N60C3 Overview

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Part Image SPP20N60C3XKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB