Part Image

SPP21N50C3XKSA1 - Infineon

Description: MOSFET N-Ch 560V 21A TO220-3

Download SPP21N50C3XKSA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SPP21N50C3XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - SPP21N50C3XKSA1*1
click to zoom
3D Models
SPP21N50C3XKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - SPP21N50C3XKSA1*1
click to zoom

SPP21N50C3XKSA1 Details

  • Manufacturer Part Number:

    SPP21N50C3XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    GREEN, PLASTIC, TO-220, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    690 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    21 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    63 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SPP21N50C3XKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the SPP21N50C3XKSA1 is 175°C, as specified in the datasheet.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal pad and thermal vias to dissipate heat efficiently.
  • The maximum current rating of the SPP21N50C3XKSA1 is 21A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the PCB's thermal design.
  • To protect the SPP21N50C3XKSA1 from overvoltage and overcurrent, a voltage clamp or a transient voltage suppressor (TVS) can be used. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
  • The recommended gate drive voltage for the SPP21N50C3XKSA1 is between 10V and 15V, as specified in the datasheet. A higher gate drive voltage can improve the device's switching performance, but may also increase power consumption.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SPP21N50C3XKSA1 Overview

Use the download button to access the SPP21N50C3XKSA1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SPP21, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SPP21N50C3XKSA1

Showing 0 results

SPP21N50C3XKSA1 Alternates

Showing results

Image Part Number Model
Part Image IPP50R190CEXKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 18.5A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IPP50R190CE Infineon Technologies AG

Power Field-Effect Transistor, 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image SPP21N50C3 Rochester Electronics LLC

21A, 500V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN