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SPW11N60S5 - Infineon

Description: Infineon SPW11N60S5 N-channel MOSFET Transistor, 11 A, 600 V, 3-Pin TO-247

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SPW11N60S5 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - SPW11N60S5
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SPW11N60S5 Details

  • Manufacturer Part Number:

    SPW11N60S5

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247

  • Package Description:

    GREEN, PLASTIC PACKAGE-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    340 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.38 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    22 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SPW11N60S5 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the SPW11N60S5 is 175°C, as specified in the datasheet. However, it's recommended to derate the power dissipation to ensure reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, apply a thin layer of thermal interface material (TIM) to the device's exposed pad, and ensure good airflow around the heat sink.
  • The recommended gate drive voltage for the SPW11N60S5 is between 10V and 15V. This ensures reliable switching and minimizes power losses.
  • Yes, the SPW11N60S5 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the gate drive circuitry is optimized for high-frequency operation, and consider the device's switching losses and thermal performance.
  • To protect the SPW11N60S5, use a voltage clamp or a transient voltage suppressor (TVS) to limit voltage spikes. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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SPW11N60S5 Overview

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Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET