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SPW20N60S5 - Infineon

Description: N-channel MOSFET,SPW20N60S5 20A 600V

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Symbol
SPW20N60S5 - Infineon - PCB symbol
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PCB Footprints
SPW20N60S5 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-247_2022
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3D Models
SPW20N60S5 - Infineon - 3D model - Transistor Outline, Vertical - PG-247_2022
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SPW20N60S5 Details

  • Manufacturer Part Number:

    SPW20N60S5

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-247

  • Package Description:

    GREEN, PLASTIC PACKAGE-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    690 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    208 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SPW20N60S5 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the SPW20N60S5 is 175°C, as specified in the datasheet. However, it's recommended to derate the power dissipation to ensure reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10 K/W is recommended. Additionally, apply a thin layer of thermal interface material (TIM) between the device and heat sink to minimize thermal resistance.
  • The recommended gate drive voltage for the SPW20N60S5 is between 10V and 15V. This ensures reliable switching and minimizes the risk of false triggering.
  • Yes, the SPW20N60S5 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the gate drive circuitry is optimized for high-frequency operation, and consider the effects of parasitic inductance and capacitance on the device's performance.
  • To protect the SPW20N60S5 from overvoltage and overcurrent, consider using a voltage clamp or a transient voltage suppressor (TVS) diode in parallel with the device. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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SPW20N60S5 Overview

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