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SPW47N60C3 - Infineon

Description: N-channel MOSFET,SPW47N60C3 47A 650V

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PCB Footprints
SPW47N60C3 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - pg-to-247
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3D Models
SPW47N60C3 - Infineon  - 3D model - Transistor Outline, Vertical - pg-to-247
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SPW47N60C3 Details

  • Manufacturer Part Number:

    SPW47N60C3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-247AC

  • Package Description:

    GREEN, PLASTIC, TO-247, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1800 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    47 A

  • Drain-source On Resistance-Max:

    0.07 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    415 W

  • Pulsed Drain Current-Max (IDM):

    141 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

SPW47N60C3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the SPW47N60C3 is 175°C, as specified in the datasheet.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1 K/W is recommended. Additionally, the device should be mounted on a PCB with a thermal pad and thermal vias to dissipate heat efficiently.
  • The maximum current rating of the SPW47N60C3 is 47A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the PCB's thermal design.
  • To protect the SPW47N60C3 from overvoltage and overcurrent, a suitable voltage regulator and current limiter should be used. Additionally, a fuse or a current-sensing resistor can be used to detect overcurrent conditions.
  • The recommended gate drive voltage for the SPW47N60C3 is between 10V and 15V, as specified in the datasheet. A higher gate drive voltage can reduce the device's on-state resistance, but may also increase the risk of gate oxide damage.

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SPW47N60C3 Overview

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Part Image SPW47N60C2 Infineon Technologies AG

Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247