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SQ2310CES-T1_GE3 - Vishay

Description: Automotive N-Channel 20 V (D-S) 175 °C MOSFET

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PCB Footprints
SQ2310CES-T1_GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)-1
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3D Models
SQ2310CES-T1_GE3 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)-1
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SQ2310CES-T1_GE3 Details

  • Manufacturer Part Number:

    SQ2310CES-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    5 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.03 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    70 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    55 ns

  • Turn-on Time-Max (ton):

    41 ns

SQ2310CES-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SQ2310CES-T1_GE3 is a rectangular pad with a size of 2.5 mm x 1.25 mm, with a 0.5 mm radius corner and a 0.3 mm spacing between pads.
  • To handle thermal management, ensure good thermal conductivity between the device and the PCB by using a thermal pad or a thermal interface material. Also, consider using a heat sink or a thermal management system to keep the junction temperature below 150°C.
  • The maximum allowed voltage derating for SQ2310CES-T1_GE3 is 80% of the maximum rated voltage, which is 1000 V. Therefore, the maximum allowed voltage derating is 800 V.
  • Yes, SQ2310CES-T1_GE3 can be used in high-frequency applications up to 1 MHz. However, it's essential to consider the device's parasitic capacitance and inductance, as well as the PCB layout, to minimize high-frequency losses.
  • To ensure reliability in a humid environment, follow the recommended storage and handling procedures, and consider using a conformal coating or a moisture-resistant package. Also, ensure the device is operated within the recommended temperature and humidity ranges.

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SQ2310CES-T1_GE3 Overview

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