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SQ2337CES-T1_GE3 - Vishay

Description: MOSFETs P-CHANNEL 80-V (D-S) 175C MOSFET

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SQ2337CES-T1_GE3 - Vishay - PCB symbol
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PCB Footprints
SQ2337CES-T1_GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
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3D Models
SQ2337CES-T1_GE3 - Vishay - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
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SQ2337CES-T1_GE3 Details

  • Manufacturer Part Number:

    SQ2337CES-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • Country Of Origin:

    Mainland China, Taiwan

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    6 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    2.2 A

  • Drain-source On Resistance-Max:

    0.29 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    38 pF

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    3 W

  • Pulsed Drain Current-Max (IDM):

    9 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    39 ns

  • Turn-on Time-Max (ton):

    27 ns

SQ2337CES-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for SQ2337CES-T1_GE3 is a rectangular pad with a size of 1.3 mm x 0.8 mm, with a non-solder mask defined (NSMD) pad shape. This is to ensure proper soldering and to prevent solder bridging.
  • The thermal pad of SQ2337CES-T1_GE3 should be connected to a thermal via or a copper pour on the PCB to dissipate heat efficiently. Ensure the thermal via is not solder-masked and has a sufficient number of vias to dissipate heat effectively.
  • The maximum operating temperature range for SQ2337CES-T1_GE3 is -55°C to +150°C. However, the device's performance and reliability may degrade if operated at the extreme ends of this range for an extended period.
  • Yes, SQ2337CES-T1_GE3 is designed to withstand high-vibration environments. However, it's essential to ensure the device is properly mounted and secured to the PCB to prevent mechanical stress and damage.
  • Store SQ2337CES-T1_GE3 in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, avoiding touching the leads or thermal pad to prevent damage from electrostatic discharge (ESD).

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SQ2337CES-T1_GE3 Overview

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Part Image SQ2337ES-T1_GE3 Vishay Intertechnologies

Power Field-Effect Transistor, 2.2A I(D), 80V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB