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SQ2337ES-T1_BE3 - Vishay

Description: TrenchFET® Power MOSFET AEC-Q101 Qualified c 100 % Rg and UIS Tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

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PCB Footprints
SQ2337ES-T1_BE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236): 3-LEAD.
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3D Models
SQ2337ES-T1_BE3 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236): 3-LEAD.
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SQ2337ES-T1_BE3 Details

  • Manufacturer Part Number:

    SQ2337ES-T1_BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    6 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    2.2 A

  • Drain-source On Resistance-Max:

    0.29 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    38 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    3 W

  • Pulsed Drain Current-Max (IDM):

    9 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    39 ns

  • Turn-on Time-Max (ton):

    23 ns

SQ2337ES-T1_BE3 Frequently Asked Questions (FAQs)

  • The recommended storage temperature range for SQ2337ES-T1_BE3 is -40°C to 125°C.
  • Yes, SQ2337ES-T1_BE3 is designed to operate in humid environments, but it's recommended to follow proper handling and storage procedures to prevent moisture-related issues.
  • The maximum allowable voltage for SQ2337ES-T1_BE3 is 1.5 times the rated voltage (37V) for a maximum of 10 seconds.
  • Handle SQ2337ES-T1_BE3 with ESD-protective equipment and follow proper ESD handling procedures to prevent damage.
  • Yes, SQ2337ES-T1_BE3 is AEC-Q200 qualified, making it suitable for use in automotive applications.

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SQ2337ES-T1_BE3 Overview

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Part Image SQ2337ES-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 2.2A I(D), 80V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB