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SQ2348CES-T1_GE3 - Vishay

Description: MOSFET Automotive P-Channel 12 V (D-S) 175C MOSFET PowerPAK SC-70W, 19 mohm a. 4.5V

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SQ2348CES-T1_GE3 - Vishay - PCB symbol
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PCB Footprints
SQ2348CES-T1_GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
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3D Models
SQ2348CES-T1_GE3 - Vishay - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
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SQ2348CES-T1_GE3 Details

  • Manufacturer Part Number:

    SQ2348CES-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    12 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3 W

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    41 ns

  • Turn-on Time-Max (ton):

    19 ns

SQ2348CES-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SQ2348CES-T1_GE3 is a rectangle with dimensions 2.5 mm x 1.3 mm, with a 0.5 mm radius corner and a 0.3 mm spacing between pads.
  • To handle thermal management, ensure good thermal conductivity between the device and the PCB by using a thermal pad or a thermal interface material. Also, consider using a heat sink or a thermal management system to keep the junction temperature below 150°C.
  • The maximum allowed voltage derating for SQ2348CES-T1_GE3 is 80% of the rated voltage, which is 48 V. Therefore, the maximum allowed voltage derating is 38.4 V.
  • Yes, SQ2348CES-T1_GE3 can be used in high-frequency applications up to 1 MHz. However, it's essential to consider the device's parasitic inductance and capacitance, as well as the PCB layout, to minimize high-frequency losses.
  • To ensure the reliability of SQ2348CES-T1_GE3 in a humid environment, apply a conformal coating to the device and the PCB, and follow the recommended storage and handling procedures to prevent moisture absorption.

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SQ2348CES-T1_GE3 Overview

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