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SQ2348ES-T1_GE3 - Vishay

Description: VISHAY - SQ2348ES-T1_GE3 - MOSFET, AEC-Q101, N-CH, 30V, SOT-23

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PCB Footprints
SQ2348ES-T1_GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
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3D Models
SQ2348ES-T1_GE3 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
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SQ2348ES-T1_GE3 Details

  • Manufacturer Part Number:

    SQ2348ES-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SMALL OUTLINE, R-PDSO-G3

  • Reach Compliance Code:

    Unknown

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    12 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    41 ns

  • Turn-on Time-Max (ton):

    19 ns

SQ2348ES-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended storage temperature range for SQ2348ES-T1-GE3 is -40°C to 125°C.
  • Yes, the SQ2348ES-T1-GE3 is RoHS (Restriction of Hazardous Substances) compliant, meaning it meets the EU's directive on the restriction of hazardous substances in electrical and electronic equipment.
  • The maximum operating voltage for SQ2348ES-T1-GE3 is 50V.
  • Yes, the SQ2348ES-T1-GE3 is suitable for high-reliability applications, such as aerospace, defense, and industrial control systems, due to its high-quality construction and rigorous testing.
  • To ensure optimal performance, handle the SQ2348ES-T1-GE3 by the body, avoid touching the leads or the component, and use an anti-static wrist strap or mat to prevent electrostatic discharge damage.

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SQ2348ES-T1_GE3 Overview

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Part Image SQ2348CES-T1_BE3 Vishay Intertechnologies

Power Field-Effect Transistor, 8A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Part Image SQ2348CES-T1_GE3 Vishay Intertechnologies

Power Field-Effect Transistor, 8A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236