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SQ3987EV-T1_GE3 - Vishay

Description: • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see

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PCB Footprints
SQ3987EV-T1_GE3 - Vishay PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOP: 5/6−LEAD
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3D Models
SQ3987EV-T1_GE3 - Vishay  - 3D model - SOT23 (6-Pin) - TSOP: 5/6−LEAD
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SQ3987EV-T1_GE3 Details

  • Manufacturer Part Number:

    SQ3987EV-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TSOP-6

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Date Of Intro:

    2019-09-22

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.9

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    0.185 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    74 pF

  • JESD-30 Code:

    R-PDSO-G6

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

SQ3987EV-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended storage temperature for SQ3987EV-T1_GE3 is -40°C to 125°C.
  • Yes, the SQ3987EV-T1_GE3 is RoHS (Restriction of Hazardous Substances) compliant, meaning it meets the EU's directive on the restriction of hazardous substances in electrical and electronic equipment.
  • The maximum power dissipation for SQ3987EV-T1_GE3 is 1.5 W at 25°C ambient temperature.
  • Yes, the SQ3987EV-T1_GE3 is suitable for high-reliability applications, such as aerospace, defense, and medical devices, due to its high-quality construction and rigorous testing.
  • To ensure optimal performance, handle the SQ3987EV-T1_GE3 by the body, avoid touching the leads or pins, and use an anti-static wrist strap or mat to prevent electrostatic discharge damage.

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SQ3987EV-T1_GE3 Overview

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