Description:MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified
• TrenchFET® Power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
The recommended PCB footprint for SQ4282EY-T1_GE3 is a rectangle with dimensions 2.5 mm x 1.3 mm, with a 0.5 mm x 0.5 mm pad in the center for the thermal pad.
To ensure reliable soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a solder flux to the pads. Also, ensure the PCB is clean and free of oxidation.
The maximum allowed voltage derating for SQ4282EY-T1_GE3 is 80% of the maximum rated voltage, which is 28 V. Therefore, the derated voltage should not exceed 22.4 V.
While the SQ4282EY-T1_GE3 has a high junction temperature rating of 150°C, it's essential to consider the thermal resistance and power dissipation when operating in high-temperature environments. Ensure proper heat sinking and thermal management to prevent overheating.
To calculate the power dissipation, use the formula: Pd = (Vin - Vout) x Iout, where Vin is the input voltage, Vout is the output voltage, and Iout is the output current. Also, consider the thermal resistance and junction temperature to ensure safe operation.
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SQ4282EY-T1_GE3 Overview
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