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SQ4401CEY-T1_GE3 - Vishay

Description: • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

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SQ4401CEY-T1_GE3 - Vishay - PCB symbol
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SQ4401CEY-T1_GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SOIC (NARROW): 8 LEAD
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SQ4401CEY-T1_GE3 - Vishay - 3D model - Small Outline Packages - SOIC (NARROW): 8 LEAD
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SQ4401CEY-T1_GE3 Details

  • Manufacturer Part Number:

    SQ4401CEY-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MS-012, SOIC, SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    45 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    17.3 A

  • Drain-source On Resistance-Max:

    0.014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    436 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    7.14 W

  • Pulsed Drain Current-Max (IDM):

    69 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    140 ns

  • Turn-on Time-Max (ton):

    190 ns

SQ4401CEY-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SQ4401CEY-T1_GE3 is a rectangle with dimensions 2.5 mm x 1.25 mm, with a pad size of 1.5 mm x 0.75 mm and a pitch of 0.5 mm.
  • To handle thermal management, ensure good thermal conductivity between the device and the PCB by using thermal vias, thermal pads, or a heat sink. Keep the ambient temperature below 125°C and avoid overheating during soldering.
  • The maximum allowable voltage for SQ4401CEY-T1_GE3 is 50 V, but it's recommended to operate within the specified voltage range of 10 V to 40 V for optimal performance and reliability.
  • Yes, SQ4401CEY-T1_GE3 is suitable for high-frequency applications up to 1 GHz due to its low ESL (Equivalent Series Inductance) and ESR (Equivalent Series Resistance). However, ensure proper PCB layout and decoupling to minimize parasitic effects.
  • Select the capacitor value based on the specific requirements of your application, considering factors such as voltage rating, capacitance value, and tolerance. Consult the datasheet and application notes for guidance.

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SQ4401CEY-T1_GE3 Overview

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Part Image SQ4401EY-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 17.3A I(D), 40V, 0.014ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA