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SQ4917CEY-T1_GE3 - Vishay

Description: MOSFET Automotive Dual P-Channel 60V 175CmOSFET 48mO 10V, 61.2mO 4.5V

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SQ4917CEY-T1_GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SO-8
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SQ4917CEY-T1_GE3 - Vishay  - 3D model - Small Outline Packages - SO-8
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SQ4917CEY-T1_GE3 Details

  • Manufacturer Part Number:

    SQ4917CEY-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    25 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.048 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    142 pF

  • JESD-30 Code:

    R-PDSO-G8

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    5 W

  • Power Dissipation-Max (Abs):

    5 W

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    61 ns

  • Turn-on Time-Max (ton):

    34 ns

SQ4917CEY-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SQ4917CEY-T1_GE3 is a 1210 (3232 metric) package with a minimum pad size of 1.3 mm x 1.3 mm and a maximum pad size of 1.5 mm x 1.5 mm, with a non-solder mask defined (NSMD) pad shape.
  • To handle thermal management, ensure good thermal conductivity between the device and the PCB by using a thermal pad or a thermal interface material (TIM). Keep the surrounding components at a safe distance to prevent thermal coupling, and consider using a heat sink or a thermal management system if the device is expected to operate at high temperatures or high power levels.
  • The maximum allowed voltage derating for the SQ4917CEY-T1_GE3 is 80% of the maximum rated voltage, which is 50 V. Therefore, the maximum allowed voltage derating is 40 V.
  • Yes, the SQ4917CEY-T1_GE3 is suitable for high-frequency applications up to 1 GHz. However, it's essential to consider the device's parasitic inductance and capacitance, as well as the PCB layout and design, to minimize signal degradation and ensure optimal performance.
  • To ensure the SQ4917CEY-T1_GE3 meets the required ESD protection standards, follow proper handling and storage procedures, and implement ESD protection measures during manufacturing and assembly, such as using ESD-safe materials, wrist straps, and ionizers.

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SQ4917CEY-T1_GE3 Overview

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Part Image SQ4917EY-T1_BE3 Vishay Intertechnologies

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Part Image SQ4917CEY Vishay Intertechnologies

Power Field-Effect Transistor, 8A I(D), 60V, 0.048ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET