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SQD07N25-350H_GE3 - Vishay

Description: MOSFET N-Channel 250V AEC-Q101 Qualified

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SQD07N25-350H_GE3 - Vishay PCB footprint - Other - Other - SQD07N25-350H_GE3
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SQD07N25-350H_GE3 - Vishay  - 3D model - Other - SQD07N25-350H_GE3
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SQD07N25-350H_GE3 Details

  • Manufacturer Part Number:

    SQD07N25-350H_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, DPAK-3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.97

  • Avalanche Energy Rating (Eas):

    2.4 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    7 A

  • Drain-source On Resistance-Max:

    0.35 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    15 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SQD07N25-350H_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SQD07N25-350H_GE3 is a standard TO-247-3L package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure reliable soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a solder flux compatible with the component's lead finish. Avoid overheating or applying excessive force, which can damage the component.
  • The maximum allowed voltage derating for SQD07N25-350H_GE3 is 80% of the maximum rated voltage (350V) at high temperatures (above 150°C) to ensure reliable operation and prevent premature failure.
  • Yes, SQD07N25-350H_GE3 is suitable for high-frequency switching applications up to 100 kHz due to its low gate charge and internal gate resistance. However, ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • To protect SQD07N25-350H_GE3 from ESD, handle the component in an ESD-controlled environment, use ESD-protective packaging and tools, and ensure that the PCB design includes ESD protection circuits, such as TVS diodes or ESD-protection arrays.

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SQD07N25-350H_GE3 Overview

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