SQD100N03-3M2L-GE3 footprint, schematic symbol and 3D model by Vishay

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PCB Footprints

SQD100N03-3M2L-GE3 - Vishay PCB footprint - Other - Other - TO-252AA_(h=2.507)

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Datasheet Download Datasheet
Stock & Prices Price & Stock for SQD100N03-3M2L-GE3
Part Number SQD100N03-3M2L-GE3
Manufacturer Vishay
Pin Count 3
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - TO-252AA_(h=2.507)
Released Date Nov 18, 2021
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

SQD100N03-3M2L-GE3 Details

Manufacturer Part Number:
SQD100N03-3M2L-GE3
Pbfree Code:
Yes
Rohs Code:
Yes
Part Life Cycle Code:
Obsolete
Package Description:
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:
Unknown
ECCN Code:
EAR99
Manufacturer:
Vishay Intertechnologies
YTEOL:
0
Avalanche Energy Rating (Eas):
180 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
30 V
Drain Current-Max (ID):
100 A
Drain-source On Resistance-Max:
0.0032 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-252AA
JESD-30 Code:
R-PSSO-G2
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Pulsed Drain Current-Max (IDM):
150 A
Surface Mount:
YES
Terminal Finish:
MATTE TIN
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
30
Transistor Element Material:
SILICON

SQD100N03-3M2L-GE3 Frequently Asked Questions (FAQs)

The recommended PCB footprint for SQD100N03-3M2L_GE3 is a TO-220AB package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm.
To ensure reliable operation of SQD100N03-3M2L_GE3 in high-temperature environments, it is recommended to follow the thermal management guidelines provided in the datasheet, including using a heat sink with a thermal resistance of ≤ 1.5°C/W and ensuring good airflow around the device.
The maximum allowed voltage transient for SQD100N03-3M2L_GE3 is ± 50V for a duration of ≤ 50ns, as specified in the datasheet. Exceeding this limit may damage the device.
Yes, SQD100N03-3M2L_GE3 can be used in a parallel configuration to increase current handling, but it is essential to ensure that the devices are properly matched and that the current sharing is balanced to avoid overheating and reduce reliability.
The recommended gate drive voltage for SQD100N03-3M2L_GE3 is between 10V and 15V, with a rise time of ≤ 10ns and a fall time of ≤ 10ns, to ensure reliable switching and minimize losses.

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SQD100N03-3M2L-GE3 Overview

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