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SQD10N30-330H_GE3 - Vishay

Description: MOSFET N Ch 300Vds 30Vgs AEC-Q101 Qualified

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SQD10N30-330H_GE3 - Vishay - PCB symbol
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SQD10N30-330H_GE3 - Vishay PCB footprint - Other - Other - SQD10N30-330H_GE3-1
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SQD10N30-330H_GE3 - Vishay - 3D model - Other - SQD10N30-330H_GE3-1
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SQD10N30-330H_GE3 Details

  • Manufacturer Part Number:

    SQD10N30-330H_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Reach Compliance Code:

    Unknown

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    4 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    300 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.33 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    55 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    42 ns

  • Turn-on Time-Max (ton):

    43 ns

SQD10N30-330H_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SQD10N30-330H_GE3 is a TO-247-3L package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure proper cooling, a heat sink with a thermal resistance of ≤ 1.5°C/W is recommended. Additionally, a thermal interface material (TIM) with a thermal conductivity of ≥ 1 W/m-K should be used between the device and heat sink.
  • The maximum allowed voltage transient for the SQD10N30-330H_GE3 is ± 50 V for a duration of ≤ 100 ns, with a maximum repetition rate of 100 kHz.
  • Yes, the SQD10N30-330H_GE3 can be used in a parallel configuration, but it's essential to ensure that the devices are matched in terms of their electrical characteristics and that the gate drive circuits are properly synchronized.
  • The recommended gate drive voltage for the SQD10N30-330H_GE3 is between 10 V and 15 V, with a maximum gate current of 5 A.

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SQD10N30-330H_GE3 Overview

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