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SQD25N15-52_GE3 - Vishay

Description: MOSFET 150V 25A 136W AEC-Q101 Qualified

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SQD25N15-52_GE3 - Vishay PCB footprint - Other - Other - SQD25N15-52_GE3-1
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SQD25N15-52_GE3 Details

  • Manufacturer Part Number:

    SQD25N15-52_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.97

  • Avalanche Energy Rating (Eas):

    101 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.145 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

SQD25N15-52_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SQD25N15-52_GE3 is a standard TO-252 (D-PAK) footprint with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure proper soldering, use a soldering iron with a temperature of 250°C to 270°C, and apply a small amount of solder paste to the PCB pads. Use a soldering technique that minimizes the risk of overheating the component.
  • The maximum allowed voltage derating for the SQD25N15-52_GE3 is 10% of the maximum rated voltage, which is 150V. Therefore, the maximum allowed voltage derating is 15V.
  • Yes, the SQD25N15-52_GE3 can be used in high-frequency applications up to 1 MHz. However, the device's performance may degrade at higher frequencies due to internal capacitances and inductances.
  • To handle ESD protection for the SQD25N15-52_GE3, use ESD-sensitive handling procedures, such as wearing an ESD strap, using an ESD mat, and storing the components in ESD-protective packaging.

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SQD25N15-52_GE3 Overview

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