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SQD30N05-20L_GE3 - Vishay

Description: MOSFET N-Channel 55V AEC-Q101 Qualified

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PCB Footprints
SQD30N05-20L_GE3 - Vishay PCB footprint - Other - Other - DPAK TO-252
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3D Models
SQD30N05-20L_GE3 - Vishay  - 3D model - Other - DPAK TO-252
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SQD30N05-20L_GE3 Details

  • Manufacturer Part Number:

    SQD30N05-20L_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.02 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

SQD30N05-20L_GE3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SQD30N05-20L_GE3 is -55°C to 175°C.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate drive voltage is sufficient to overcome the threshold voltage (Vth) of around 2-4V.
  • The maximum current rating for the SQD30N05-20L_GE3 is 30A, but this is dependent on the PCB design, thermal management, and cooling system used.
  • To prevent overheating and thermal runaway, ensure proper thermal management, such as using a heat sink, and monitor the junction temperature (Tj) to stay within the recommended operating range.
  • The recommended gate resistor value for the SQD30N05-20L_GE3 is typically in the range of 10Ω to 100Ω, but this may vary depending on the specific application and gate driver used.

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SQD30N05-20L_GE3 Overview

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