SQD50N10-8m9L_GE3 - Vishay

SQD50N10-8m9L_GE3 Details

• Manufacturer Part Number:

  SQD50N10-8M9L_GE3

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Package Description:

  DPAK-3/2

• Country Of Origin:

  Germany

• ECCN Code:

  EAR99

• Factory Lead Time:

  25 Weeks

• Manufacturer:

  Vishay Intertechnologies

• YTEOL:

  6

• Avalanche Energy Rating (Eas):

  92 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  100 V

• Drain Current-Max (ID):

  50 A

• Drain-source On Resistance-Max:

  0.0089 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  160 pF

• JEDEC-95 Code:

  TO-252AA

• JESD-30 Code:

  R-PSSO-G2

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  2

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  175 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  N-CHANNEL

• Pulsed Drain Current-Max (IDM):

  200 A

• Reference Standard:

  AEC-Q101

• Surface Mount:

  YES

• Terminal Finish:

  Pure Matte Tin (Sn) - annealed

• Terminal Form:

  GULL WING

• Terminal Position:

  SINGLE

• Time@Peak Reflow Temperature-Max (s):

  30

• Transistor Element Material:

  SILICON

• Turn-off Time-Max (toff):

  325 ns

• Turn-on Time-Max (ton):

  36 ns