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SQD50P03-07_GE3 - Vishay

Description: MOSFET P-Channel 30V AEC-Q1 01 Qualified

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SQD50P03-07_GE3 - Vishay PCB footprint - Other - Other - TO-252AA_
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SQD50P03-07_GE3 Details

  • Manufacturer Part Number:

    SQD50P03-07_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.007 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

SQD50P03-07_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SQD50P03-07_GE3 is a rectangle with dimensions of 5.5 mm x 3.5 mm, with a thermal pad in the center. The datasheet provides a recommended land pattern, but it's essential to consult the manufacturer's application notes for specific guidance.
  • To ensure reliability in high-temperature applications, it's crucial to follow proper derating guidelines, ensure good thermal management, and consider the device's thermal resistance (RthJA). Additionally, consult the manufacturer's reliability data and perform thorough testing to validate the device's performance under extreme temperatures.
  • The SQD50P03-07_GE3 has an integrated ESD protection diode, but it's still essential to follow proper ESD handling and storage procedures to prevent damage. The device can withstand ESD pulses up to 2 kV according to the Human Body Model (HBM) and 150 V according to the Machine Model (MM).
  • While the SQD50P03-07_GE3 is primarily designed for low-frequency applications, it can be used in high-frequency switching applications with proper design considerations. However, the device's parasitic capacitance and inductance may affect its performance at high frequencies. Consult the manufacturer's application notes and perform thorough testing to validate the device's performance in your specific application.
  • The optimal gate resistor value for SQD50P03-07_GE3 depends on the specific application, switching frequency, and gate drive requirements. A general guideline is to start with a value between 10 Ω to 100 Ω and adjust based on the device's gate charge characteristics and the driver's output impedance. Consult the manufacturer's application notes and perform thorough testing to determine the optimal value for your specific application.

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SQD50P03-07_GE3 Overview

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