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SQJ110EP-T1_GE3 - Vishay

Description: MOSFETs N-CHANNEL 100-V (D-S) 175C MOSFET

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SQJ110EP-T1_GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8L Single Short Ear
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3D Models
SQJ110EP-T1_GE3 - Vishay  - 3D model - Other - PowerPAK® SO-8L Single Short Ear
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SQJ110EP-T1_GE3 Details

  • Manufacturer Part Number:

    SQJ110EP-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SO-8L, 4 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    25 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    84 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    170 A

  • Drain-source On Resistance-Max:

    0.0063 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    42 pF

  • JESD-30 Code:

    R-PSSO-G4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    500 W

  • Pulsed Drain Current-Max (IDM):

    224 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    63 ns

  • Turn-on Time-Max (ton):

    33 ns

SQJ110EP-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SQJ110EP-T1_GE3 is a standard SOT23-3L package with a 1.3mm x 1.3mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive PCB material, and minimizing power dissipation. Additionally, the SQJ110EP-T1_GE3 is rated for operation up to 150°C, but derating may be necessary for extended lifetimes.
  • The maximum allowed voltage for the SQJ110EP-T1_GE3 is 120V, which is the maximum repetitive peak voltage rating. However, it's recommended to operate the device within the specified voltage range (100V) for optimal performance and reliability.
  • Yes, the SQJ110EP-T1_GE3 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as turn-on and turn-off times, and ensure that the application's switching frequency does not exceed the device's maximum rated frequency.
  • The SQJ110EP-T1_GE3 has an integrated ESD protection diode, but it's still recommended to follow proper ESD handling procedures during assembly and testing. This includes using ESD-safe materials, grounding personnel, and using ESD-protected workstations.

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SQJ110EP-T1_GE3 Overview

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