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SQJ186EP-T1_GE3 - Vishay

Description: MOSFETs N-CHANNEL 80-V (D-S) 175C MOSFET

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PCB Footprints
SQJ186EP-T1_GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8L Single Short Ear
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3D Models
SQJ186EP-T1_GE3 - Vishay  - 3D model - Other - PowerPAK® SO-8L Single Short Ear
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SQJ186EP-T1_GE3 Details

  • Manufacturer Part Number:

    SQJ186EP-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SO-8L, 4 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    25 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    25 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.015 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    17 pF

  • JESD-30 Code:

    R-PSSO-G4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    135 W

  • Pulsed Drain Current-Max (IDM):

    112 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    37 ns

  • Turn-on Time-Max (ton):

    20 ns

SQJ186EP-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended storage temperature for SQJ186EP-T1_GE3 is -40°C to 125°C, as per Vishay's general guidelines for storage and handling of semiconductor devices.
  • While the SQJ186EP-T1_GE3 is designed to operate in a wide range of temperatures, it's not recommended for use in high-humidity environments (> 80% RH) without proper protection, such as conformal coating or hermetic sealing, to prevent moisture-related failures.
  • The maximum allowable voltage stress on the SQJ186EP-T1_GE3 is 1.5 times the rated voltage (150V) for a short duration (< 1 second), as per Vishay's application notes for TVS diodes.
  • To ensure proper soldering, follow Vishay's recommended soldering profile: peak temperature 260°C, time above 220°C 30 seconds, and avoid exceeding 3 reflows. Use a solder with a melting point above 220°C and follow IPC J-STD-020 guidelines.
  • While the SQJ186EP-T1_GE3 is designed for ESD protection, it's not optimized for high-frequency applications (> 100 MHz). For high-frequency applications, consider using a TVS diode with a lower capacitance and optimized for high-frequency performance.

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SQJ186EP-T1_GE3 Overview

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