Part Image

SQJ202EP-T1_GE3 - Vishay

Description: Mosfet Array 12V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric

Download SQJ202EP-T1_GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
SQJ202EP-T1_GE3 - Vishay  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

SQJ202EP-T1_GE3 Details

  • Manufacturer Part Number:

    SQJ202EP-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8L, 4 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    16.2 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.0065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    340 pF

  • JESD-30 Code:

    R-PSSO-G4

  • Number of Elements:

    2

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    27 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    34 ns

  • Turn-on Time-Max (ton):

    18.5 ns

SQJ202EP-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SQJ202EP-T1_GE3 is in a dry, cool place with a temperature range of 5°C to 30°C and humidity below 60%. This helps prevent moisture absorption and ensures the component's reliability.
  • While SQJ202EP-T1_GE3 is a high-performance Schottky rectifier, its frequency response is limited to around 100 kHz. For high-frequency applications above 100 kHz, it's recommended to consider alternative components specifically designed for high-frequency operation.
  • To ensure reliable operation, it's essential to provide adequate thermal management for SQJ202EP-T1_GE3. This can be achieved by using a heat sink, ensuring good airflow, and keeping the component away from heat sources. The maximum junction temperature (Tj) should not exceed 150°C.
  • Yes, SQJ202EP-T1_GE3 is compatible with lead-free soldering processes. However, it's essential to follow the recommended soldering profile and temperature guidelines to ensure reliable assembly and prevent damage to the component.
  • The typical reverse recovery time (trr) of SQJ202EP-T1_GE3 is around 30 ns. This is an important parameter to consider when designing switching circuits, as it affects the overall system performance and efficiency.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

SQJ202EP-T1_GE3 Overview

Use the download button to access the SQJ202EP-T1_GE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like SQJ20, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SQJ202EP-T1_GE3

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview