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SQJ416EP-T1_GE3 - Vishay

Description: MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified

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PCB Footprints
SQJ416EP-T1_GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8L Case Outline 2_2022
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3D Models
SQJ416EP-T1_GE3 - Vishay  - 3D model - Other - PowerPAK® SO-8L Case Outline 2_2022
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SQJ416EP-T1_GE3 Details

  • Manufacturer Part Number:

    SQJ416EP-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SO-8L, 4 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    25 Weeks

  • Date Of Intro:

    2016-07-19

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    26 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    27 A

  • Drain-source On Resistance-Max:

    0.03 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    70 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

SQJ416EP-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended storage temperature for SQJ416EP-T1_GE3 is -40°C to 125°C.
  • Yes, SQJ416EP-T1_GE3 is RoHS compliant, meaning it meets the European Union's Restriction of Hazardous Substances directive.
  • The maximum power dissipation for SQJ416EP-T1_GE3 is 1.5 W at 25°C ambient temperature.
  • Yes, SQJ416EP-T1_GE3 is AEC-Q101 qualified, making it suitable for use in automotive applications.
  • The typical junction-to-ambient thermal resistance for SQJ416EP-T1_GE3 is 125°C/W.

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SQJ416EP-T1_GE3 Overview

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