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SQJ444EP-T1_GE3 - Vishay

Description: MOSFETs N-Ch 40V Vds AEC-Q101 Qualified

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SQJ444EP-T1_GE3 Details

  • Manufacturer Part Number:

    SQJ444EP-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SO-8L, 4 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    25 Weeks

  • Date Of Intro:

    2016-07-19

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    31.2 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.0032 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    220 pF

  • JESD-30 Code:

    R-PSSO-G4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    68 W

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    85 ns

  • Turn-on Time-Max (ton):

    50 ns

SQJ444EP-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SQJ444EP-T1_GE3 is in a dry, cool place, away from direct sunlight and moisture, with a temperature range of -40°C to 125°C.
  • Yes, SQJ444EP-T1_GE3 is a high-reliability component, suitable for use in high-reliability applications, such as aerospace, defense, and medical devices, due to its high-quality manufacturing process and rigorous testing.
  • To prevent electrostatic discharge (ESD) damage, handle SQJ444EP-T1_GE3 with ESD-protective equipment, such as wrist straps, mats, and bags, and follow proper ESD handling procedures.
  • The thermal resistance of SQJ444EP-T1_GE3 is not explicitly stated in the datasheet, but it can be estimated based on the package type and material. For a more accurate value, consult with Vishay Intertechnologies or a thermal analysis expert.
  • Yes, SQJ444EP-T1_GE3 is rated for high-temperature operation, with a maximum junction temperature of 150°C. However, ensure that the component is properly derated and thermal management is implemented to prevent overheating.

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SQJ444EP-T1_GE3 Overview

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